发明名称 |
LOW THERMAL EMISSIVITY FILM USING AMORPHOUS SI-IN-ZNO MULTILAYER STRUCTURE |
摘要 |
<p>Disclosed is a thermal radiation barrier wherein an underlayer, an insulative layer, and a protective layer make up a multi-layer structure applied to the top of a substrate. The thermal radiation barrier includes a first amorphous silicon indium zinc oxide layer as the underlayer on the substrate; a silver layer as the insulative layer on the first amorphous silicon indium zinc oxide layer; and a second amorphous silicon indium zinc oxide layer as the protective layer on the silver layer. The content of silicone included in each of the first and second amorphous silicon indium zinc oxide layers is in the range of 0.01 wt% and 30 wt%.</p> |
申请公布号 |
KR20150090419(A) |
申请公布日期 |
2015.08.06 |
申请号 |
KR20140011053 |
申请日期 |
2014.01.29 |
申请人 |
CHEONGJU UNIVERSITY INDUSTRY & ACADEMY COOPERATION FOUNDATION |
发明人 |
LEE, SANG YEOL |
分类号 |
C23C14/22;C23C14/06;C23C14/24;C23C14/34;C23C28/00 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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