SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor device comprises the steps of: partially removing an upper portion of an active fin of a substrate disposed inside a chamber to form a trench and a source and drain layer; supplying a silicon source gas, the germanium source gas, the etching gas and the carrier gas to perform a selective epitaxial growth process using an upper surface of an active region exposed by the trench as a seed in order to enable the silicon-germanium layer to be grown when the source and drain layer is formed; and supplying the carrier gas while purging the chamber in order to etch the silicon-germanium layer.