发明名称 Memory device
摘要 A memory device is described. The memory device comprises an antiferromagnet (17), an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet tunnel junction (20) can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments (22) in the antiferromagnet, applying an external magnetic field and then cooling the junction to a temperature below the critical temperature.
申请公布号 EP2744002(B1) 申请公布日期 2015.08.05
申请号 EP20120197333 申请日期 2012.12.14
申请人 HITACHI, LTD. 发明人 WUNDERLICH, JOERG;MARTI, XAVIER;JUNGWIRTH, TOMAS
分类号 H01L43/08;G11C11/16;H01F10/00;H01F10/32 主分类号 H01L43/08
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