发明名称 |
Memory device |
摘要 |
A memory device is described. The memory device comprises an antiferromagnet (17), an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet tunnel junction (20) can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments (22) in the antiferromagnet, applying an external magnetic field and then cooling the junction to a temperature below the critical temperature. |
申请公布号 |
EP2744002(B1) |
申请公布日期 |
2015.08.05 |
申请号 |
EP20120197333 |
申请日期 |
2012.12.14 |
申请人 |
HITACHI, LTD. |
发明人 |
WUNDERLICH, JOERG;MARTI, XAVIER;JUNGWIRTH, TOMAS |
分类号 |
H01L43/08;G11C11/16;H01F10/00;H01F10/32 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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