| 摘要 |
<p>The vertical silicon photomultiplier according to the present invention includes a trench electrode and a PN-junction layer perpendicular to the trench electrode forms and can maximize the quantum efficiency at optical wavelengths, 200~900 nm in such a way that: it generates electric fields horizontal thereto, by applying a reverse bias voltage to between the trench electrode and the PN-junction layer, so that, although ultraviolet light does not reach the PN-junction layer but is incident on the surface, electron-hole pairs can be produced by the horizontally generated electric fields although and an avalanche breakdown can be thus generated; and it allows ultraviolet light, capable of being transmitted to a relatively deep depth, to react with the PN-junction layer.</p> |
