| 摘要 |
The present invention relates to a method for doping a solar cell, a method for forming a metal electrode, and a solar cell produced by using the same. More specifically, a process of forming a silicide layer used for a metal electrode and a high-doping region around an electrode formed to reduce contact resistance with the electrode is simultaneously performed as one single process. The method of the present invention comprises the steps of: performing doping and passivation for forming PN junction on a silicone wafer, and removing a part of a passivation layer for forming a contact region; adding, to the contact region, ink mixed with dopant source, silicone, and silicide raw ingredient metal; heating the same in an inert or reductive atmosphere to form a silicide layer, and forming a high-doping region by diffusing dopant included in silicide to the silicone wafer; and forming a metal electrode on an upper part thereof. |
