Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation

摘要

The present disclosure concerns a magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) comprising a synthetic storage layer (23); a sense layer (21) having a sense magnetization (211) that is reversible; and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); wherein a net local magnetic stray field couples the storage layer (23) with the sense layer (21); and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer (21) is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell (1). The disclosed MRAM cell (1) can be written and read with lower consumption in comparison to conventional MRAM cells.