| 摘要 |
<p>A light emitting device according to an embodiment includes a substrate, a first conductivity type semiconductor layer arranged on the substrate, an active layer arranged on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer arranged on the active layer, and a strain control layer arranged between the first conductivity type semiconductor layer and the active layer. The strain control layer may include a first strain control layer of InGaN/GaN and a second strain control layer of InGaN/GaN:Si. Defects generated on heterojunction interface can be removed by preparing a Si-doped layer on a strain control layer.</p> |
