发明名称 |
MEMORY CELL AND MEMORY DEVICE |
摘要 |
A programmable magnetoresistive memory cell. The memory cell has a magnetic element that includes a first and a second ferromagnetic layer. The first and second ferromagnetic layers are separated by a non-ferromagnetic and preferably electrically insulating spacer layer. The data bit is read out by measuring the electrical resistance across the magnetic element. The memory cell further includes: a third ferromagnetic layer having a well-defined magnetization direction and a resistance switching material having a carrier density. The carrier density can be altered by causing an ion concentration to become altered by means of an applied electrical voltage signal. Thus, the carrier density can be switched between a first and second state. |
申请公布号 |
EP2245631(B1) |
申请公布日期 |
2015.08.05 |
申请号 |
EP20090702102 |
申请日期 |
2009.01.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KARG, SIEGFRIED, F.;MEIJER, INGMAR |
分类号 |
H01L43/08;G11C11/16;G11C13/02;H01L45/00 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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