发明名称 MEMORY CELL STATE IN A VALLEY BETWEEN ADJACENT DATA STATES
摘要 The present disclosure includes apparatuses and methods related to memory cell state in a valley between adjacent data states. A number of methods can include determining whether a state of a memory cell is in a valley between adjacent distributions of states associated with respective data states. The method can also include transmitting a signal indicative of a data state of the memory cell and whether the state of the memory cell is in the valley.
申请公布号 EP2880658(A4) 申请公布日期 2015.08.05
申请号 EP20130826136 申请日期 2013.07.31
申请人 MICRON TECHNOLOGY, INC. 发明人 PARTHASARATHY, SIVAGNANAM;KHAYAT, PATRICK R.;KAYNAK, MUSTAFA N.;EISENHUTH, ROBERT B.
分类号 G11C16/34;G06F11/10;G11C11/56;G11C16/04;G11C16/06;G11C16/26 主分类号 G11C16/34
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