| 摘要 |
A package structure (10) includes a dielectric layer (14), at least one semiconductor device (12) attached to the dielectric layer (14), one or more dielectric sheets (26) applied to the dielectric layer (14) and about the semiconductor device(s) (12) to embed the semiconductor device(s) (12) therein, and a plurality of vias (30,36) formed to the semiconductor device(s) (12) that are formed in at least one of the dielectric layer (14) and the one or more dielectric sheets (26). The package structure (10) also includes metal interconnects (38) formed in the vias (30,36) and on one or more outward facing surfaces (18,20) of the package structure (10) to form electrical interconnections to the semiconductor device(s) (12). The dielectric layer (14) is composed of a material that does not flow during a lamination process and each of the one or more dielectric sheets (26) is composed of a curable material configured to melt and flow when cured during the lamination process so as to fill-in any air gaps around the semiconductor device(s) (12). |
