发明名称 薄膜トランジスタの半導体層用薄膜の形成に用いられるターゲット組立体の品質評価方法
摘要 <p>The task of the present invention is to provide a method for easily evaluating the quality of a target assembly with high-precision. The method for evaluating the quality of the present invention comprises: a first step for preparing a target assembly in which a plurality of oxide target members is arranged with a gap by interposing a bonding material on a backing plate; a second step for forming a thin film by sputtering the target assembly; a third step for calculating the time in which the reflectance is to be 1/e as a life time valueτ1 of a joint portion of the thin film by irradiating excitation light and microwaves in a region including a joint portion A corresponding to the gap of the target assembly, measuring a maximum value of a reflected wave from the joint portion A of the microwaves changed by the irradiation of the excitation light, stopping the irradiation of the excitation light, and measuring the change of reflectivity from the joint portion A of the microwaves after stopping the irradiation of the excitation light; and a fourth step for evaluating the quality of the target assembly based on the life time valueτ1 of the joint portion A.</p>
申请公布号 JP5759425(B2) 申请公布日期 2015.08.05
申请号 JP20120162138 申请日期 2012.07.20
申请人 发明人
分类号 C23C14/34;G01N22/00;H01L21/363 主分类号 C23C14/34
代理机构 代理人
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