RADIO FREQUENCY SWITCH CIRCUIT AND ELECTRONIC DEVICE
摘要
The present invention relates to a high frequency switch circuit and an electronic device. The high frequency switch circuit of the present invention can comprise: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common access node connected to an antenna port to be operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common access node to be operated by a second gate signal; a negative voltage generating unit for using the voltage of a high frequency signal at the common access node and generating a negative voltage; and a gate signal generating unit for using the negative voltage of the negative voltage generating unit and the operating voltage according to a switching control signal and generating the first and the second gate signals.
申请公布号
KR20150089645(A)
申请公布日期
2015.08.05
申请号
KR20140010524
申请日期
2014.01.28
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
YOO, HYUN JIN;YOO, HYUN HWAN;KIM, YOO HWAN;KIM, JONG MYEONG;JANG, DAE SEOK;NA, YOO SAM