| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aluminum-diamond composite having both high thermal conductivity and a coefficient of thermal expansion near that of a semiconductor element and further improved in surface roughness of a surface and flatness so as to be suitable for use in a heat sink of a semiconductor element or the like. <P>SOLUTION: The aluminum-diamond composite contains an aluminum-diamond composite material which includes metal containing 40-70 vol.% of a diamond particle and the remainder of aluminum, and is formed in a plate with a thickness of 0.4-6 mm or a plate having a recessed and projecting portion. Both main surfaces of the aluminum-diamond composite are coated with an aluminum-ceramic composite with a thickness of 0.05-0.5 mm, and the aluminum-diamond composite has a structure where the aluminum-diamond composite is exposed at a side face and a hole. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
