发明名称 半導体装置
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology capable of improving connection reliability between bump electrodes of a semiconductor chip and wirings of a mounting substrate; specifically, technology capable of improving connection reliability between the bump electrodes and the wirings formed on a glass substrate by ensuring flatness of the bump electrodes even when the wirings are arranged in an uppermost wiring layer below the bump electrodes.SOLUTION: A semiconductor device comprises wirings L1 including a power supply wiring and a signal wiring and dummy patterns DP which are formed in an uppermost wiring layer immediately below a non-overlap region Y of a bump electrode BP1. The dummy patterns DP are arranged so as to fill spaces between the wirings L1 to reduce irregularity caused by the wirings L1 and the spaces in the uppermost wiring layer. Further, planarization by a CMP method is performed on a surface protection film formed so as to cover the uppermost wiring layer.</p>
申请公布号 JP5759029(B2) 申请公布日期 2015.08.05
申请号 JP20140010219 申请日期 2014.01.23
申请人 发明人
分类号 H01L21/60;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/60
代理机构 代理人
主权项
地址