发明名称 |
SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING PARASITIC LEAKAGE BARRIER LAYER |
摘要 |
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack. |
申请公布号 |
EP2901490(A1) |
申请公布日期 |
2015.08.05 |
申请号 |
EP20130842724 |
申请日期 |
2013.06.24 |
申请人 |
INTEL CORPORATION |
发明人 |
PILLARISETTY, RAVI;GOEL, NITI;THEN, HAN WUI;LE, VAN H.;RACHMADY, WILLY;RADOSAVLJEVIC, MARKO;DEWEY, GILBERT;CHU-KUNG, BENJAMIN |
分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L29/10;H01L29/16 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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