发明名称 Semiconductor gas sensor
摘要 The sensor (10) has main portion (20) having passivation layer (30) and control electrode (100). A contact area has a first contact region having a formation (112) passing through passivation layer and having a bottom surface with conductive layer. The first contact region has frictional and electrical connections with control electrode via connecting component (130). The second contact region has frictional connection with control electrode via connecting component (140). The connecting component (130) at least partially fills the formation and connects electrode to conductive layer.
申请公布号 EP2594928(A3) 申请公布日期 2015.08.05
申请号 EP20120007744 申请日期 2012.11.15
申请人 MICRONAS GMBH 发明人 WILBERTZ, CHRISTOPH;KOLLETH, TOBIAS;FRERICHS, HEINZ-PETER
分类号 G01N27/414 主分类号 G01N27/414
代理机构 代理人
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