The present invention relates to a preparation method of a graphene nano device, which comprises the steps of: forming a first metal mask pattern on a substrate on which a graphene layer is formed; and forming a graphene pattern by performing an etching process which allows the first metal mask pattern to be used as an etching mask, wherein the step of forming the first metal mask pattern includes the steps of: forming a first adhesive layer on the graphene layer; disposing the previously prepared first metal mask pattern on the adhesive layer; and adhering the first metal mask pattern onto the substrate by heating the first adhesive layer.
申请公布号
KR20150089512(A)
申请公布日期
2015.08.05
申请号
KR20140010209
申请日期
2014.01.28
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
JEON, EUN KYOUNG;KANG, HYUN SEO;LIM, KWON SEOB;PARK, HYOUNG JUN;KIM, KEO SIK;KIM, JEONG EUN;KIM, YOUNG SUN;HEO, YOUNG SOON