| 摘要 |
An apparatus and continuous stable process for producing multicrystalline silicon ingots with large cross-sections by an induction method, by maintaining surface temperature of the ingot at the output of the crucible within the range of 900-1150° C., and by heating the ingot at the output of the upper zone of the controlled cooling compartment to a temperature of 1200-1250° C., followed by cooling of the ingot at a rate of no more than 10° C./cm. |
