| 摘要 |
The present invention relates to graphene for a semiconductor co-doped with boron and nitrogen and a manufacturing method thereof. According to the present invention, graphene for a semiconductor and graphene manufactured by the manufacturing method can be used as a semiconductor by doping nitrogen and boron at the same time. Accordingly, in the case of graphene manufactured by the conventional manufacturing method, graphene which cannot be used as a semiconductor by not having a band gap even with physical, chemical, and electrical stability can be used as a semiconductor, and applied to in various fields. |
