发明名称 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method capable of suppressing a calculation amount increasing when a mesh size used in correction calculation is reduced. <P>SOLUTION: This charged particle beam lithography apparatus includes a first kernel producing part 60 for calculating the value of a first kernel in a first mesh, a second kernel producing part 61 for calculating the value of a second kernel in a second mesh size which is integral multiplies of the first mesh size, a difference kernel producing part 62 for calculating the value of a difference kernel between the value of the first kernel and the value of the second kernel, area density calculating parts 63, 64 for producing an area density map of each mesh, an irradiation amount density map producing part 70 for producing an irradiation amount density map by calculating the irradiation amount density of each mesh, and convolutional calculation parts 66, 67, 68 for performing first convolutional calculation of the map value of a first irradiation amount density map and the difference kernel in a first region, and performing second convolutional calculation of the map value of a second irradiation amount density map and the second kernel in a second region wider than the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5758325(B2) 申请公布日期 2015.08.05
申请号 JP20120038920 申请日期 2012.02.24
申请人 发明人
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
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