| 摘要 |
<p>An insulated gate semiconductor device includes a region that is provided between trenches (10) in which a gate electrode (6) is filled through a gate insulating film (5a) in a surface layer of a substrate, includes a p base region (3) and an n + emitter region (4), and comes into conductive contact with an emitter electrode (8) and a p-type floating region (20) that is electrically insulated by an insulating film (7) which is interposed between the p-type floating region (20) and the emitter electrode (8). The p-type floating region (20) is deeper than the trench (10) and has a lower impurity concentration than the p base region (3).</p> |
