III-V photonic integration on silicon

摘要

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

主权项

1. An article comprising:
(1) a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising:
(a) a substrate having a first surface, the substrate comprising single-crystal silicon;(b) a first dielectric layer that is disposed on and in direct contact with the first surface, the first dielectric layer comprising a first dielectric material and a second surface that is distal to the first surface; and(c) a first semiconductor layer that is disposed on and in direct contact with the second surface, the first semiconductor layer having a third surface that is distal to the second surface, and the first semiconductor layer including a first waveguide; (2) a compound semiconductor structure comprising a first compound semiconductor layer and at least one quantum well; and (3) a bonded interface located at the third surface, the semiconductor structure and the compound semiconductor structure being joined at the bonded interface such that the bonded interface is characterized by a lattice mismatch; wherein the first compound semiconductor layer and the first waveguide are evanescently coupled.