| 发明名称 | Wafer scale epitaxial graphene transfer | ||
| 摘要 | A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer. | ||
| 申请公布号 | US9096050(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201313855313 | 申请日期 | 2013.04.02 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Bedell Stephen W.;Dimitrakopoulos Christos D.;Fogel Keith E.;Hannon James B.;Kim Jeehwan;Park Hongsik;Pfeiffer Dirk;Sadana Devendra K. |
| 分类号 | H01L21/20;B32B43/00;H01L21/027;H05K3/04 | 主分类号 | H01L21/20 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A method for transfer of a two-dimensional material, comprising: forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having at least one monolayer; forming a stressor layer on the spreading layer, the stressor layer being configured to apply stress to at least a closest monolayer of the spreading layer; exfoliating at least the closest monolayer by mechanically splitting the spreading layer into portions wherein at least the closest monolayer remains on the stressor layer; transferring at least the closest monolayer on the stressor layer; and etching away the stressor layer to release at least the closest monolayer onto a second substrate for device formation. | ||
| 地址 | Armonk NY US | ||