| 发明名称 | Quantum dot solar cells with band alignment engineering | ||
| 摘要 | A solar cell and method of making are disclosed. The solar cell includes an acceptor layer a donor layer treated with a first quantum dot (QD) ligand and a blocking layer treated with a second, different, QD ligand. The acceptor layer has an acceptor layer valence band and an acceptor layer conduction band. The donor layer has a donor layer valence band and a donor layer conduction band, the donor layer valence band is higher than the acceptor layer valence band, the donor layer conduction band is higher than the acceptor layer conduction band. The blocking layer least partially blocks electron flow in at least one direction, the blocking layer having a blocking layer valence band and a blocking layer conduction band, the blocking layer valence band is higher than the donor layer valence band, the blocking layer conduction band is higher than the donor layer conduction band. | ||
| 申请公布号 | US9099663(B1) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201414268772 | 申请日期 | 2014.05.02 |
| 申请人 | Massachusetts Institute of Technology | 发明人 | Chuang Chia-Hao Marcus;Bulovic Vladimir;Bawendi Moungi G.;Brown Patrick Richard |
| 分类号 | H01L29/06;H01L31/00;H01L51/42;H01L31/0352;H01L31/0272 | 主分类号 | H01L29/06 |
| 代理机构 | Meagher Emanuel Laks Goldberg & Liao, LLP | 代理人 | Meagher Emanuel Laks Goldberg & Liao, LLP |
| 主权项 | 1. A solar cell comprising: an acceptor layer, a donor layer treated with a first quantum dot (QD) ligand and a blocking layer treated with a second QD ligand that is different than the first QD ligand; and an anode coupled to at least one of the donor layer, acceptor layer and the blocking layer and a cathode coupled to another of the donor layer, acceptor layer and the blocking layer; the acceptor layer having an acceptor layer valence band and an acceptor layer conduction band; the donor layer having a donor layer valence band and a donor layer conduction band, the donor layer valence band being higher than the acceptor layer valence band, the donor layer conduction band being higher than the acceptor layer conduction band; the blocking layer being configured to at least partially block electron flow in at least one direction, the blocking layer having a blocking layer valence band and a blocking layer conduction band, the blocking layer valence band being higher than the donor layer valence band, the blocking layer conduction band being higher than the donor layer conduction band. | ||
| 地址 | Cambridge MA US | ||