Memory device and method thereof

摘要

A first input of a sense amplifier is connected to a first bitline, a second input of the sense amplifier is connected to a second bitline, a third input of the sense amplifier is coupled to a third bitline. The sense amplifier provides at an output an indicator of a storage state of a memory cell connected to the first bitline based upon information provided to the sense amplifier via the first, second, and third bitlines.

主权项

1. A method comprising:
receiving, via a first bitline, first information including first storage state information from a first memory cell of a first plurality of memory cells, and second information including second storage state information from a second memory cell of the first plurality of memory cells; and determining at a first sense amplifier, during a read operation of the first memory cell, an indicator corresponding to the first storage state information of the first memory cell based upon the first information and the second information.