| 发明名称 | Nitride semiconductor light-emitting element and method for producing nitride semiconductor light-emitting element | ||
| 摘要 | To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of Inx1Ga1-x1N (0<x1≦1) and a second buffer layer expressed by an equation of Inx2Ga1-x2N (0≦x2<1, x2<x1) alternately laminated, an In composition x1 of the first buffer layer is changed, and the In composition x1 of at least one layer of the first buffer layers is higher than an In composition of the active layer, and a method for producing the same. | ||
| 申请公布号 | US9099586(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201213680460 | 申请日期 | 2012.11.19 |
| 申请人 | SHARP KABUSHIKI KAISHA | 发明人 | Ueda Masaya;Ueta Yoshihiro;Sano Yuichi;Okumura Toshiyuki |
| 分类号 | H01L33/04;H01L33/12;H01L33/00 | 主分类号 | H01L33/04 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A nitride semiconductor light-emitting element comprising: a substrate; an n-type nitride semiconductor layer and a p-type nitride semiconductor layer provided on said substrate; and a buffer layer and an active layer provided between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, wherein said buffer layer has plural first buffer layers, each of which is independently expressed by an equation of Inx1Ga1-x1N (0<x1≦1) and plural second buffer layers, each of which is independently expressed by an equation of Inx2Ga1-x2N (0≦x2<1, x2<x1), said buffer layer including a superlattice structure in which said first buffer layer and said second buffer layer are alternately laminated, In compositions x1 of said plural first buffer layers are changed in said buffer layer, the In composition x1 of at least one layer of said plural first buffer layers is lower than an In composition of said active layer, the In composition x1 of at least one other layer of said plural first buffer layers is higher than an In composition of said active layer, and an effective bandgap of said buffer layer, in a region that the In composition x1 of at least one layer of said plural first buffer layers is higher than an In composition of said active layer, is larger than an effective bandgap of said active layer. | ||
| 地址 | Osaka JP | ||