发明名称 |
Pixel drive circuit and preparation method therefor, and array substrate |
摘要 |
The application discloses a pixel driving circuit and a fabrication method thereof as well as an array substrate, the pixel driving circuit including a switching and a driving TFT, the method including: on a substrate, fabricating a gate, a gate insulation GI layer, an oxide semiconductor layer, and an etching stop ESL layer simultaneously in turn; depositing simultaneously source/drain metals of the switching TFT and the driving TFT, the drain metal of the switching TFT extending and covering the GI layer on the gate of the driving TFT by etching; depositing a protection layer; etching off the protection layer, the drain metal of the switching TFT and the GI layer at a via hole by using a via hole process, to expose the gate of the driving TFT; depositing an ITO layer connecting the drain of the switching TFT and the gate of the driving TFT at the via hole. |
申请公布号 |
US9099497(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201214124763 |
申请日期 |
2012.11.23 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Jiang Chunsheng |
分类号 |
H01L29/10;H01L29/66;H01L27/12;H01L29/786 |
主分类号 |
H01L29/10 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A fabrication method of a pixel driving circuit, the pixel driving circuit including a switching thin film field effect transistor TFT and a driving TFT, the method including:
a) on a substrate, fabricating a gate, a gate insulation GI layer, an oxide semiconductor layer, and an etching stop ESL layer of the switching TFT and the driving TFT simultaneously in turn; b) depositing simultaneously source/drain metals of the switching TFT and the driving TFT, the drain metal of the switching TFT extending and covering the GI layer on the gate of the driving TFT by etching; c) depositing a protection layer; d) etching off the protection layer, the drain metal of the switching TFT and the GI layer at a via hole by using a via hole process, to expose the gate of the driving TFT; and e) depositing an Indium Tin Oxide ITO layer connecting the drain of the switching TFT and the gate of the driving TFT at the via hole. |
地址 |
Beijing CN |