发明名称 Electrode assembly
摘要 The present invention relates to an electrode assembly having a laminate structure comprising: a first insulating capping layer; a first conducting layer capped by the first insulating capping layer and substantially sandwiched by at least the first insulating capping layer such as to leave exposed only an electrical contact lip of the first conducting layer; and an array of etched voids extending through at least the first insulating capping layer and the first conducting layer, wherein each void is partly bound by a surface of the first conducting layer which acts as an internal submicron electrode.
申请公布号 US9097654(B2) 申请公布日期 2015.08.04
申请号 US200913130878 申请日期 2009.11.30
申请人 Nanoflex Limited and The University Court Of The University of Edinburgh 发明人 Freeman Neville John;Mount Andrew Raymond;Walton Anthony John;Terry Jonathan Gordon
分类号 C25B11/03;C25B11/02;G01N27/30 主分类号 C25B11/03
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. An electrode assembly having a laminate structure comprising: a first insulating capping layer; a first conducting layer capped by the first insulating capping layer and substantially encapsulated by at least the first insulating capping layer such that only an electrical contact lip of the first conducting layer is exposed; and an array of etched voids extending through at least the first insulating capping layer and the first conducting layer, wherein each void is partly bound by a surface of the first conducting layer which acts as an internal submicron electrode, wherein a thickness of the conducting layer is in the range of an atomic thickness to 0.99 microns, a depth of the internal submicron electrode is in the range of 0.05 to 10 microns, an etch depth of each void is in the range of 0.05 to 100 microns, a lateral dimension of each void is in the range of 10 to 100 microns and the array has a pitch in the range of 10 to 200 microns.
地址 GB