发明名称 |
Thin film transistor array panel |
摘要 |
A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc. |
申请公布号 |
US9099438(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201213660362 |
申请日期 |
2012.10.25 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Park Jae Woo;Kim Do-Hyun;Choi Young Joo;Lee Dong Hoon;Cho Sung Haeng |
分类号 |
H01L29/10;H01L29/45;H01L29/49;H01L29/786;H01L27/12 |
主分类号 |
H01L29/10 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. A thin film transistor array panel comprising:
a gate line disposed on a substrate and including a gate electrode; a semiconductor layer including an oxide semiconductor disposed on the substrate; and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and one end of a drain electrode facing the source electrode, wherein at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer, a main wiring layer disposed on the barrier layer, and a capping layer disposed on the main wiring layer, wherein the main wiring layer includes at least one of copper and a copper alloy, wherein the barrier layer and the capping layer include a metal oxide, wherein the barrier layer is in a polycrystalline state, and wherein the metal oxide includes zinc. |
地址 |
Yongin, Gyeonggi-Do KR |