发明名称 |
Schottky barrier diode and method of manufacturing the same |
摘要 |
A schottky barrier diode may include a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n− type epitaxial layer, a second n type epitaxial layer disposed on the first n− type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other. |
申请公布号 |
US9099378(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201213710119 |
申请日期 |
2012.12.10 |
申请人 |
HYUNDAI MOTOR COMPANY |
发明人 |
Lee Jong Seok;Hong Kyoung-Kook |
分类号 |
H01L29/66;H01L29/16 |
主分类号 |
H01L29/66 |
代理机构 |
Morgan, Lewis & Bockius LLP |
代理人 |
Morgan, Lewis & Bockius LLP |
主权项 |
1. A schottky barrier diode comprising:
an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed in the n− type epitaxial layer; an n type epitaxial layer disposed on the n− type epitaxial layer and the first p+ region; a second p+ region disposed in the n type epitaxial layer and formed in a quadrangle shape; a schottky electrode disposed on and contacting the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region comprises a first portion formed in a quadrangle shape and a second portion disposed on the first portion and connected to the first portion, wherein the second p+ region is directly placed on the first portion of the first p+ region, such that the first portion of the first p+ region and the second p+ region are in contact with each other, wherein the second portion of the first p+ region is connected to the second p+ region through the first portion of the first p+ region, wherein the n type epitaxial layer comprises a middle portion and an outer edge portion surrounding the middle portion; and wherein the second p+ region is disposed on the outer edge portion of the n type epitaxial layer and is not disposed in the middle portion of the n type epitaxial layer. |
地址 |
Seoul KR |