Semiconductor devices including spacers on sidewalls of conductive lines and methods of manufacturing the same

摘要

Semiconductor devices are provided that include spacers on sidewalls of conductive lines, as well as methods for manufacturing the same. A method for manufacturing a semiconductor device includes forming bit lines on a semiconductor substrate. Triple-layered bit line spacers are formed on respective sidewalls of the bit lines. An interlayer insulation layer is formed on the bit lines and the triple-layered bit line spacers. Storage node contact plugs that penetrate the interlayer insulation layer are formed between the bit lines. Portions of the triple-layered bit line spacers are etched to form recessed regions. An insulation layer is formed on the substrate including the recessed regions. Storage node electrodes electrically connected to the storage node contact plugs are formed.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming bit lines on a semiconductor substrate; forming triple-layered bit line spacers on respective ones of sidewalls of the bit lines; forming an interlayer insulation layer on the bit lines and the triple-layered bit line spacers; forming storage node contact plugs that penetrate the interlayer insulation layer between the bit lines; etching portions of the triple-layered bit line spacers to form recessed regions; forming an insulation layer on the substrate including the recessed regions; and forming storage node electrodes electrically connected to the storage node contact plugs.