Method of forming a non-polar/semi-polar semiconductor template layer on unevenly patterned substrate

摘要

Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
etching a sapphire substrate to form uneven patterns thereon, the sapphire substrate comprising an A-plane or M-plane crystal plane; and forming a template layer on the etched sapphire substrate, wherein forming the template layer comprises:
forming a low-temperature nitride semiconductor layer at a temperature in the range of 400 to 700° C.;forming a high-temperature nitride semiconductor layer at a temperature in the range of 700 to 1100° C.; andforming an undoped GaN layer at a temperature in the range of 800 to 1100° C., and wherein the low-temperature nitride semiconductor layer of the template layer contacts the sapphire substrate.