发明名称 Semiconductor package with low profile switch node integrated heat spreader
摘要 In one implementation, a semiconductor package includes a patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the patterned conductive carrier. In addition, the semiconductor package includes a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of the patterned conductive carrier. The semiconductor package further includes a heat spreading conductive plate situated over a control source of the control FET and over a sync drain of the sync FET so as to couple the control source and the sync drain to a switch node segment of the patterned conductive carrier.
申请公布号 US9099452(B2) 申请公布日期 2015.08.04
申请号 US201414522989 申请日期 2014.10.24
申请人 International Rectifier Corporation 发明人 Cho Eung San;Clavette Dan
分类号 H01L23/00;H01L23/495;H01L21/52 主分类号 H01L23/00
代理机构 Farjami & Farjami LLP 代理人 Farjami & Farjami LLP
主权项 1. A semiconductor package comprising: a patterned conductive carrier; a control FET having a control drain attached to a first partially etched segment of said patterned conductive carrier; a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of said patterned conductive carrier; a heat spreading conductive plate situated over a control source of said control FET and over a sync drain of said sync FET so as to couple said control source and said sync drain to a switch node segment of said patterned conductive carrier.
地址 El Segundo CA US
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