Semiconductor device

摘要

A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.

主权项

1. A semiconductor device comprising:
a first impurity diffusion region formed in a substrate; an isolation region formed in the substrate, the isolation region surrounding the first impurity diffusion region or separating the first impurity diffusion region from another impurity diffusion region; a potential supply interconnect formed in an interconnect layer above the first impurity diffusion region, and extending in a first direction; a first local interconnect formed in contact with an upper surface of the first impurity diffusion region and an upper surface of the isolation region, and disposed below the potential supply interconnect; and a first contact hole electrically coupling the first local interconnect to the potential supply interconnect.