发明名称 | Polishing systems and methods for removing conductive material from microelectronic substrates | ||
摘要 | Polishing systems and methods for removing conductive material (e.g., noble metals) from microelectronic substrates are disclosed herein. Several embodiments of the methods include forming an aperture in a substrate material, disposing a conductive material on the substrate material and in the aperture, and disposing a fill material on the conductive material. The fill material at least partially fills the aperture. The substrate material is then polished to remove at least a portion of the conductive material and the fill material external to the aperture during which the fill material substantially prevents the conductive material from smearing into the aperture during polishing the substrate material. | ||
申请公布号 | US9099431(B2) | 申请公布日期 | 2015.08.04 |
申请号 | US201414323945 | 申请日期 | 2014.07.03 |
申请人 | Micron Technology, Inc. | 发明人 | Sinha Nishant |
分类号 | H01L23/532;H01L49/02;H01L21/321;H01L21/768 | 主分类号 | H01L23/532 |
代理机构 | Perkins Coie LLP | 代理人 | Perkins Coie LLP |
主权项 | 1. A method for forming microelectronic structures, comprising: forming an aperture in a substrate material; disposing a conductive material on the substrate material, the conductive material having a first conductive portion in the aperture and a second conductive portion external of the aperture; disposing a fill material on the conductive material, the fill material including a material selected from the group consisting of titanium, titanium nitride, and titanium oxide, wherein the fill material has a first fill portion in the aperture and proximate to the first conductive portion, wherein the first fill portion extends partially into the aperture to form a tapered end, and wherein at least a portion of the first fill portion spans a width of the aperture, anda second fill portion external of the aperture and on the second conductive portion; and forming an electrical feature in the aperture. | ||
地址 | Boise ID US |