发明名称 Embedded package and method of manufacturing the same
摘要 An embedded package in which active elements, such as semiconductor chips, are embedded within a package substrate. The semiconductor chips, embedded within a dielectric layer, are coupled with circuit wires to ensure electrical and signal continuity. When connections between the semiconductor chip and the package substrate are performed in different directions, there is a reduction in overall interconnection area, connection reliability is improved, leakage currents are reduced, and higher device yields can be realized.
申请公布号 US9099313(B2) 申请公布日期 2015.08.04
申请号 US201313846807 申请日期 2013.03.18
申请人 SK Hynix Inc. 发明人 Lee Sang Yong;Kim Si Han
分类号 H01L23/31;H01L23/498;H01L23/00;H01L23/538;H05K1/18;H05K3/12;H05K3/18;H05K3/46 主分类号 H01L23/31
代理机构 William Park & Associates 代理人 William Park & Associates
主权项 1. An embedded package, comprising: a package substrate having a core having a first circuit wire pattern and a second circuit wire pattern formed on outer surfaces of the core, wherein the first circuit wire pattern formed on a first surface of the core and the second circuit wire pattern formed on a second surface that opposes the first surface of the core; a semiconductor chip formed on the first surface of the core of the package substrate; first and second bonding pads formed on the semiconductor chip; a dielectric layer having a first metal pattern formed on one surface of the dielectric layer and, the dielectric layer configured to cover the semiconductor chip, wherein the dielectric layer comprise open regions through which parts of the first and the second circuit wire patterns are exposed; a first connection wire pattern directly connects between the first bonding pad and the first circuit wire pattern of the core, wherein the first connection wire pattern contacts with the first bonding pad and vertically extends along the outer surface of the semiconductor chip to contact with the first circuit wire pattern; and a second connection wire pattern directly connects between the second bonding pad and the first metal pattern of the dielectric layer, wherein the second connection wire pattern vertically penetrates the dielectric layer.
地址 Gyeonggi-do KR