| 发明名称 | Method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns | ||
| 摘要 | Disclosed is that a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, including mixing an inorganic precursor and an organic polymer in water or an organic solvent to prepare an inorganic-polymer liquid, forming inorganic precursor/organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid, and irradiating eximer laser along the aligned inorganic precursor/organic polymer composite nanowire patterns. | ||
| 申请公布号 | US9099310(B1) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201314420041 | 申请日期 | 2013.09.06 |
| 申请人 | POSTECH ACADEMY-INDUSTRY FOUNDATION | 发明人 | Lee Tae-Woo;Min Sung-Yong |
| 分类号 | H01L21/31;H01L21/02;C30B7/14;C30B29/60;C30B29/12;C30B29/54;H01L29/06 | 主分类号 | H01L21/31 |
| 代理机构 | Lexyoume IP Meister, PLLC | 代理人 | Lexyoume IP Meister, PLLC |
| 主权项 | 1. A method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, the method comprising: mixing an inorganic precursor and an organic polymer in water or an organic solvent to provide an inorganic-polymer liquid; forming inorganic precursor/organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid; and irradiating eximer laser along the aligned inorganic precursor/organic polymer composite nanowire patterns. | ||
| 地址 | Pohang-Si KR | ||