发明名称 |
Fast secure erasure schemes for non-volatile memory |
摘要 |
A method includes, in a memory with multiple analog memory cells, storing one or more data pages in respective groups of the memory cells using a first programming configuration having a first storage speed. Upon receiving a request to securely erase a data page from the memory, one or more of the memory cells in a group that stores the data page are re-programmed using a second programming configuration having a second storage speed that is faster than the first storage speed. |
申请公布号 |
US9098401(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201213683569 |
申请日期 |
2012.11.21 |
申请人 |
Apple Inc. |
发明人 |
Kasorla Yoav;Gurgi Eyal |
分类号 |
G06F12/02;G06F21/60;G06F21/79;G11C16/14;G11C16/10;G11C16/22 |
主分类号 |
G06F12/02 |
代理机构 |
Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C. |
代理人 |
Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C. ;Heter Erik A. |
主权项 |
1. A method, comprising:
in a memory that includes multiple memory cells, storing one or more data pages in respective groups of the memory cells using a first programming configuration having a first storage speed, wherein storing the data pages using the first programming configuration comprises programming all the memory cells in each group; and upon receiving a request to securely erase a data page from the memory, re-programming one or more of the memory cells in a group that stores the data page using a second programming configuration having a second storage speed that is faster than the first storage speed, wherein re-programming the memory cells using the second programming configuration comprises selecting only a partial subset of the memory cells in the group, such that modification of data only in the partial subset will render the data page irrecoverable, and re-programming only the memory cells in the partial subset. |
地址 |
Cupertino CA US |