| 摘要 |
A pattern definition (PD) device for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices positioned in a stacked arrangement. A particle beam (Ib) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by the two deflection array devices. Each deflection array device comprises a plurality of blanking openings allowing passage of beamlets, and a plurality of deflecting devices, each deflecting device being associated with a respective blanking opening and comprising an electrostatic electrode. The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. Each deflection array device is configured to act on only respective subsets of beamlets by selectively deflecting them, while allowing the other beamlets to traverse the respective deflection array device without deflection. |
| 主权项 |
1. A pattern definition device for use in a charged-particle multi-beam processing or inspection apparatus, said device comprising an aperture field being adapted to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures forming a corresponding number of beamlets, each of the beamlets traversing the aperture field along a respective beamlet path through the pattern definition device and extending downstream of the pattern definition device to a respective nominal path for each beamlet,
said pattern definition device including at least two deflection array devices, which are positioned across said aperture field in a stacked arrangement such that each of the beamlets traverses at least two deflection array devices, each deflection array device having an area corresponding to the aperture field, said area comprising
a plurality of blanking openings allowing passage of beamlets through the respective deflection array device, anda plurality of deflecting devices, each of said deflecting devices being associated with a respective blanking opening and comprising at least one electrostatic electrode, the deflecting devices being selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets by an amount sufficient to divert said beamlets off their nominal paths, wherein for each deflection array device, the plurality of deflecting devices correspond to respective subsets of the beamlets such that each deflection array device is configured to act on only the beamlets belonging to the respective subset of beamlets by selectively deflecting them while allowing the beamlets not belonging to the respective subset to traverse the respective deflection array device without deflection, different deflection array devices of the pattern definition device being configured to act on different subsets of beamlets, while the deflection array devices taken together are able to act on the entire number of beamlets. |
