发明名称 |
LEDs with efficient electrode structures |
摘要 |
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region. |
申请公布号 |
US9099613(B2) |
申请公布日期 |
2015.08.04 |
申请号 |
US201414456935 |
申请日期 |
2014.08.11 |
申请人 |
BRIDGELUX, INC. |
发明人 |
Shum Frank T.;So William W.;Lester Steven D. |
分类号 |
H01L33/50;H01L33/00;H01L33/60;H01L33/38;H01L33/20;H01L33/40 |
主分类号 |
H01L33/50 |
代理机构 |
Arent Fox LLP |
代理人 |
Arent Fox LLP |
主权项 |
1. A Light Emitting Diode (LED) device, comprising:
a semiconductor structure comprising an active region, the active region being in electrical contact with a P doped region formed to have a generally planar surface, through which light generated in the active region can be emitted; a first bond pad structure comprising a first cutout formed in the semiconductor structure, a first dielectric layer disposed partially within the first cutout and partially over the semiconductor structure, and a first bond pad disposed partially over the first dielectric layer and partially over the first cutout; and a second bond pad structure comprising a second cutout formed in the semiconductor structure, a second dielectric layer disposed partially within the second cutout and partially over the semiconductor structure, and a second bond pad disposed partially over the second dielectric layer and partially over the second cutout. |
地址 |
Livermore CA US |