Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

摘要

A semiconductor light emitting element includes: an n-type semiconductor layer; a light emitting layer alternately laminating plural barrier layers and plural well layers; and a p-type semiconductor layer, wherein the light emitting layer includes three or more well layers and four or more barrier layers, each well layer being sandwiched by the barrier layers, one barrier layer contacting the n-type semiconductor layer, and another barrier layer contacting the p-type semiconductor layer, the well layers include plural n-side well layers from the n-type semiconductor layer side and one p-side well layer on the p-type semiconductor layer side, and a V-shaped concave portion including inclined surfaces is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In in the n-side well layer.

主权项

1. A semiconductor light emitting element comprising:
an n-type semiconductor layer laminated on a substrate; a light emitting layer laminated on the n-type semiconductor layer and having a multiple quantum well structure in which a plurality of barrier layers and a plurality of well layers containing atoms of In are alternately laminated; and a p-type semiconductor layer laminated on the light emitting layer, wherein the light emitting layer includes three or more of the well layers and four or more of the barrier layers, each of the three or more well layers being sandwiched by the barrier layers from both sides, one of the four or more barrier layers being connected to the n-type semiconductor layer at an interface portion with the n-type semiconductor layer, and another one of the four or more barrier layers being connected to the p-type semiconductor layer at an interface portion with the p-type semiconductor layer, the three or more well layers include a plurality of n-side well layers provided in order from a side closer to the n-type semiconductor layer and one p-side well layer provided on a side closer to the p-type semiconductor layer, and a V-shaped concave portion, which is configured with inclined surfaces of a concave portion opened toward the p-type semiconductor layer, is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In existing in the same n-side well layer, wherein, in at least one of the n-side well layers, the concentration of atoms of In at a location of 25 nm from the inclined surface is not more than 90% of the concentration of atoms of In existing in the same n-side well layer.