Semiconductor device and manufacturing method thereof

摘要

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode by using SiH4 and NH3 as reaction gases; forming a second insulating film over the first insulating film by using SiH4 and N2O as reaction gases; forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched, wherein each of the source electrode and the drain electrode comprises a tungsten layer; forming a protective film comprising silicon oxide over the oxide semiconductor film, the source electrode and the drain electrode; and forming a third insulating film over the oxide semiconductor film and the protective film, the second insulating film comprising silicon and nitrogen, wherein the oxide semiconductor film comprises gallium, zinc and indium.