Reverse conducting IGBT

摘要

A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode.

主权项

1. A reverse conducting IGBT comprising:
an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer, the first conductivity type drift region of the semiconductor layer contacting the insulated gate, the second conductivity type body region of the semiconductor layer being provided on the drift region and contacting the insulated gate, the first conductivity type emitter region of the semiconductor layer being provided on the body region and contacting the insulated gate, and the second conductivity type intermediate region of the semiconductor layer being provided on the emitter region and being interposed between the emitter region and the emitter electrode.