Bipolar junction transistor with spacer layer

摘要

New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are described. The SiC BJT comprises a collector region, a base region and an emitter region disposed as a stack, the emitter region and part of the base region forming a mesa. The intrinsic part of the base region includes a first portion having a first doping concentration and a second portion having a second doping concentration lower than the first doping concentration. Further, the second portion is vertically disposed between the first portion and the emitter region in the stack.

主权项

1. A silicon carbide (SiC) bipolar junction transistor (BJT), comprising:
a collector region of n-type conductivity; a base region of p-type conductivity; and an emitter region of n-type conductivity; the collector region, the base region and the emitter region being disposed as a stack, the emitter region and a part of the base region forming a mesa, the part of the base region being capped by the emitter region and including a first portion having a first doping concentration and a second portion having a second doping concentration lower than the first doping concentration, the second portion being vertically stacked between the first portion and the emitter region.