| 发明名称 | Methods of laser marking semiconductor substrates | ||
| 摘要 | In one embodiment, methods for making semiconductor devices are disclosed. | ||
| 申请公布号 | US9099481(B2) | 申请公布日期 | 2015.08.04 |
| 申请号 | US201414200283 | 申请日期 | 2014.03.07 |
| 申请人 | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC | 发明人 | {hacek over (S)}ik Jan;Kostelník Petr;Válek Luká{hacek over (s)};Lorenc Michal;Pospí{hacek over (s)}il Milo{hacek over (s)};Lysá{hacek over (c)}ek David;Parsey, Jr. John Michael |
| 分类号 | H01L21/302;H01L31/113;H01L29/06;H01L23/544;H01L21/268;H01L21/66 | 主分类号 | H01L21/302 |
| 代理机构 | Noon Intellectual Property Law, P.C. | 代理人 | Noon Intellectual Property Law, P.C. |
| 主权项 | 1. A method comprising: providing a semiconductor substrate comprising: a base substrate having a first semiconductor material;a buried structure; anda device layer having a second semiconductor material, wherein the buried structure is disposed between the base substrate and the device layer; and laser marking the semiconductor substrate, wherein the buried structure has a thickness equal to about k×λlaser/(2×n), wherein: λlaser is a wavelength of peak emission for the laser applied to mark the semiconductor substrate;k is an integer greater than zero (1, 2, 3 . . . ); andn is an index of refraction for the buried structure. | ||
| 地址 | Phoenix AZ US | ||