Process sequence for reducing pattern roughness and deformity

摘要

A method for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the pattern formed on the substrate is post-treated. The post-treating of the pattern in the layer of radiation-sensitive material is performed to reduce a roughness of the pattern. The post-treating includes performing a treatment process on the pattern to alter a solubility of an exposed surface of the pattern, wherein the treatment process involves performing a first chemical treatment of the pattern using a liquid-phase chemical solution containing a first surfactant, or exposing said pattern to second EM radiation different than said first EM radiation. Following the treatment process, the post-treating includes hard baking the pattern, and performing a second chemical treatment of the pattern using a vapor-phase chemical solution to reduce the roughness.

主权项

1. A method for patterning a substrate, comprising:
providing a substrate having a layer of radiation-sensitive material formed thereon and a pattern formed therein, said pattern having been formed by coating said substrate with said layer of radiation-sensitive material, exposing said layer of radiation-sensitive material to first electromagnetic (EM) radiation according to an image pattern, developing said layer of radiation-sensitive material to form said pattern therein from said image pattern, and rinsing said pattern; and post-treating said pattern in said layer of radiation-sensitive material to reduce a roughness of said pattern, said post-treating comprising:
(a) performing a treatment process on said pattern to alter a solubility of an exposed surface of said pattern, said performing said treatment process (a) including, in either order:
(a)(1) performing a first chemical treatment of said pattern using a liquid-phase chemical solution, said liquid-phase chemical solution containing a first surfactant selected to reduce line edge roughness (LER) and/or line width roughness (LWR), and(a)(2) performing a second chemical treatment of said pattern using another liquid-phase chemical solution, said another liquid-phase chemical solution containing a second surfactant selected to reduce pattern collapse,(b) following said performing said treatment process (a), hard baking said pattern at a hard bake temperature that is less than the glass transition temperature of said layer of radiation-sensitive material, and(c) following said hard baking (b), performing a third chemical treatment of said pattern using a vapor-phase chemical solution.