发明名称 Display device
摘要 To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
申请公布号 US9097925(B2) 申请公布日期 2015.08.04
申请号 US201313942468 申请日期 2013.07.15
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yokoyama Masatoshi;Komori Shigeki;Sato Manabu;Okazaki Kenichi;Yamazaki Shunpei
分类号 G02F1/1333;G02F1/1362 主分类号 G02F1/1333
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A display device comprising: a pixel portion comprising: a transistor comprising a semiconductor layer, a gate electrode layer, a source electrode layer and a drain electrode layer;a first inorganic insulating film covering the transistor;an organic insulating film over the first inorganic insulating film;a first transparent conductive layer over the organic insulating film;a second inorganic insulating film over the first transparent conductive layer; anda second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween and electrically connected to one of the source electrode layer and the drain electrode layer of the transistor in an opening formed in the organic insulating film and the first inorganic insulating film, wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film, and wherein the second inorganic insulating film does not overlap with the gate electrode layer of the transistor.
地址 Atsugi-shi, Kanagawa-ken JP