Transistor having an active region with wing structure

摘要

A semiconductor device includes an active region having a channel region and at least a wing region adjoining the channel region under the gate dielectric layer. The at least one wing region may be two symmetrical wing regions across the channel region.

主权项

1. An integrated circuit structure having formed therein a transistor comprising:
a semiconductor substrate having an active region defined by an isolation region; a gate dielectric layer over a portion of the active region of the semiconductor substrate; and a gate electrode over the gate dielectric layer, wherein the portion of the active region under the gate dielectric layer includes a channel region between a drain region and a source region and at least one wing region adjoining the channel region, wherein the wing region is trapezoidal having a base edge adjoining the channel region, triangular with a base edge adjoining the channel region, saw-tooth with a base edge adjoining the channel region or semi-circular with a base edge adjoining the channel region.