Semiconductor device and method of forming junction enhanced trench power MOSFET

摘要

A semiconductor device has a substrate and first and second gate structures formed over a first surface of the substrate. A drain region is formed in the substrate as a second surface of the substrate. An epitaxial region is formed in the substrate over the drain region. A sidewall spacer is formed over the first and second gate structures. A lateral LDD region is formed between the first and second gate structures. A trench is formed through the lateral LDD region and partially through the substrate self-aligned to the sidewall spacer. A vertical drift region is formed along a sidewall of the trench. An insulating material is deposited in the trench. A first source region is formed adjacent to the first gate structure opposite the lateral LDD region. A second source region is formed adjacent to the second gate structure opposite the lateral LDD region.

主权项

1. A method of making a semiconductor device, comprising:
providing a substrate; forming a gate structure over a first surface of the substrate; forming a lateral drift region adjacent to the gate structure; forming a sidewall spacer over the gate structure; forming a trench through the lateral drift region and partially through the substrate, the trench self-aligned to the sidewall spacer; forming a vertical drift region along a sidewall of the trench; depositing an insulating material in the trench; and forming a source region adjacent to the gate structure opposite the lateral drift region.