主权项 |
1. A method for screening gate stacks, the method comprising
providing a semiconductor substrate; forming a first oxide layer on the substrate; defining a plurality of site-isolated regions (SIRs) on the first oxide layer; patterning the first oxide layer in each SIR to form an active area on a surface of the substrate within each SIR; applying a first surface treatment to at least one of the SIRs in a combinatorial manner; forming a second oxide layer on the treated active area within each SIR; etching the second oxide layer within each SIR,
wherein a thickness of the second oxide layer is varied in a combinatorial manner; forming a high-k dielectric layer on the second oxide layer within each SIR; forming a metal layer on the high-k dielectric layer within each SIR; patterning the metal layer to form metal electrodes,
wherein the metal electrode, the high-k dielectric layer, and the substrate form a capacitor device within the active area of each SIR; and measuring an electrical parameter of the capacitor device formed within each SIR;
wherein the first surface treatment is applied to the active area,wherein the first surface treatment comprises exposing the active area to an activated species generated using one of direct plasma or remote plasma from at least one of H2, O2, O3, H2O, F2, H2S, HF, XeF2, NH3, N2, Cl2, or HCl, andwherein at least one of gas composition, temperature, pressure, gas flow rate, plasma power, or substrate bias used during the first surface treatment is varied among the plurality of SIRs in the combinatorial manner. |